• DocumentCode
    1758044
  • Title

    Development of an Ultralong Ultralow n-Loop for Wire Bonding

  • Author

    Fuliang Wang ; Yun Chen ; Lei Han

  • Author_Institution
    State Key Lab. of High Performance Complex Manuf., Central South Univ., Changsha, China
  • Volume
    28
  • Issue
    1
  • fYear
    2015
  • fDate
    Feb. 2015
  • Firstpage
    50
  • Lastpage
    54
  • Abstract
    In this paper, we describe an innovative method to form an ultralong ultralow loop for wire bonding. A resister was used to form kinks and simplify the capillary trace, which yielded a loop-like “n”-shape with two kinks immediately above the first and second bonds that can support the entire long-span loop. A 3-D finite element model was developed to simulate the n-loop formation, and the loop profiles of an n-loop, M-loop, and standard loop were compared. In this paper, we show that this novel n-loop can almost halve the looping time compared to that for the M-loop; and the n-loop can avoid wire sag for a 5000-μ m-long span. Furthermore, the loop height and wire verticality near the second bond can be modified by regulating the horizontal and vertical positions of the resister.
  • Keywords
    finite element analysis; lead bonding; resistors; wires (electric); 3D finite element model; capillary trace; distance 5000 mum; horizontal position regulation; loop-like n-shape; m-loop profile; resister; standard loop profile; ultralong ultralow n-loop development; vertical position regulation; wire bonding; wire sag; Bonding; Gold; Microelectronics; Packaging; Three-dimensional displays; Wires; Thermosonic wire bonding; n-loop; ultra-long ultra-low loop; ultralong ultralow (ULUL) loop;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/TSM.2014.2381219
  • Filename
    6985725