Title :
Influence of Frequency Dependent Time to Breakdown on High-K/Metal Gate Reliability
Author :
Knebel, S. ; Kupke, S. ; Schroeder, Ulrik ; Slesazeck, Stefan ; Mikolajick, Thomas ; Agaiby, R. ; Trentzsch, M.
Author_Institution :
Namlab gGmbH, Dresden, Germany
Abstract :
Time-dependent dielectric breakdown and stress-induced leakage current (SILC) behavior of a 28-nm hafnium-based high-k/metal gate n-type MOS transistors are investigated under dc and ac conditions. Compared with the constant voltage stress results under dc conditions, a decrease in device lifetime is observed for low-frequency ac stress. Degradation enhancement and SILC behavior are attributed to defect generation in the SiO2 interface layer. For high-frequency ac stress, a lifetime improvement is observed, because of reduced trap generation.
Keywords :
MOSFET; hafnium; high-k dielectric thin films; leakage currents; semiconductor device breakdown; semiconductor device reliability; Hf; SILC behavior; SiO2; ac condition; constant voltage stress; dc condition; defect generation; degradation enhancement; device lifetime; high-frequency ac stress; high-k/metal gate n-type MOS transistor; high-k/metal gate reliability; interface layer; lifetime improvement; low-frequency ac stress; size 28 nm; stress-induced leakage current; time-dependent dielectric breakdown; trap generation; High-k dielectrics; metal gate; oxygen vacancies; stress-induced leakage current (SILC); time-dependent dielectric breakdown (TDDB);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2013.2264104
