DocumentCode :
1759075
Title :
Simulation Analysis of Thermal Degradation in Graphene Back Contacted CdTe Ultrathin Films
Author :
Houshmand, M. ; Zandi, M.H. ; Gorji, N.E.
Author_Institution :
Dept. of Phys., Shahid Bahonar Univ. of Kerman, Kerman, Iran
Volume :
14
Issue :
3
fYear :
2015
fDate :
42125
Firstpage :
493
Lastpage :
496
Abstract :
Simulation analysis of the thermal degradation in performance of a graphene back contacted CdS/CdTe ultrathin film solar cell is performed using Solar Cell Capacitance Simulator. The application of the graphene nanolayer on the CdTe materials is interesting because of its cheaper cost, excellent electronic properties, and optical advantages. Degradation of a CdTe thin-film photovoltaics is mostly driven from the metallic back contacts. The graphene carbon-carbon network can reduce the extra interdiffusion of the metallic ions from the metallic back contacts to the front contact through the grain boundaries. The number of graphene layers determines the resistivity of this layer at the contact. This resistivity changes under the thermal stress. Thus, we investigate the degradation of the device metrics under thermal stress and compare it with the few experimental data reported in the literature.
Keywords :
II-VI semiconductors; cadmium compounds; capacitance; chemical interdiffusion; electrical resistivity; grain boundaries; graphene; semiconductor thin films; solar cells; thermal stresses; thin film devices; wide band gap semiconductors; C-CdS-CdTe; electrical resistivity; electronic properties; grain boundaries; graphene back contacted CdS-CdTe ultrathin film solar cell; graphene carbon-carbon network; graphene nanolayer; metallic back contacts; metallic ion interdiffusion; solar cell capacitance simulator; thermal degradation; thermal stress; thin film photovoltaics; Conductivity; Degradation; Films; Graphene; Photovoltaic cells; Stress; Thermal stresses; Back contact; CdS/CdTe; Degradation; Graphene; Ultrathin films; degradation; graphene; ultrathin films;
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2015.2408878
Filename :
7056456
Link To Document :
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