Title :
Electronic Structure and Infrared Light Emission in Dislocation-Engineered Silicon
Author :
Cheng-Lun Hsin ; Hsu-Shen Teng ; Hsiang-Yuan Lin ; Tzu-Hsuan Cheng ; Chao-Chia Cheng ; Po-Liang Liu
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan
Abstract :
One of the perspectives of the Si-based technology is the optical interconnect for data transmission and applications in optoelectronic integrated circuit. In this report, the engineered dislocation network was proposed, and the atomic structure of the dislocation array was revealed by high-resolution transmission electron microscope and scanning tunneling microscope. The photoluminescence emission is strong and compatible with intrinsic Si characteristic peak, making it possible as light emitters in silicon. The analysis of dislocation array-induced scanning tunneling spectroscopy identified the presence of defect levels under the conduction band, compared with the occupied and unoccupied Kohn-Sham orbitals in the forbidden gap of Si derived from first-principles theoretical models. This study demonstrated the possibility of dislocation-induced optical transition from a theoretical and experimental perspective, which will be essential in the development of Si-based optoelectronic integrated circuit.
Keywords :
ab initio calculations; conduction bands; defect states; dislocation arrays; elemental semiconductors; energy gap; photoluminescence; scanning tunnelling microscopy; silicon; transmission electron microscopy; Si; Si-based optoelectronic integrated circuit; Si-based technology; atomic structure; conduction band; data transmission; defect levels; dislocation array; dislocation network engineering; dislocation-engineered silicon; dislocation-induced optical transition; electronic structure; first-principles theoretical models; forbidden gap; high-resolution transmission electron microscopy; infrared light emission; light emitters; optical interconnect; optoelectronic integrated circuit; photoluminescence emission; scanning tunneling microscopy; scanning tunneling spectroscopy; Arrays; Educational institutions; Integrated circuits; Photonic band gap; Silicon; Slabs; Tunneling; Density of state; dislocation array; first-principles calculations; network; photoluminescence; tunneling current;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2015.2411292