DocumentCode :
1759484
Title :
Dielectric Stacking Effect of 
and 
in Metal&#x
Author :
Park, In-Sung ; Ryu, Kyoung-min ; Jeong, Jaehack ; Ahn, Jinho
Author_Institution :
Dept. of Mater. Sci. & Eng., Hanyang Univ., Seoul, South Korea
Volume :
34
Issue :
1
fYear :
2013
fDate :
Jan. 2013
Firstpage :
120
Lastpage :
122
Abstract :
The dielectric stacking effects of Al2O3 and HfO2 thin layers in metal-insulator-metal capacitors are investigated for their leakage current, breakdown voltage, and voltage linearity of the dielectrics. The stacked dielectrics over three layers show the enhancement of dielectric permittivity and voltage linearity of quadratic voltage coefficient compared to one-layer dielectrics. Stacking over five layers attributes to improving leakage current density and breakdown voltage characteristics than three layers.
Keywords :
MIM devices; alumina; capacitors; current density; hafnium compounds; high-k dielectric thin films; leakage currents; permittivity; Al2O3; HfO2; breakdown voltage characteristics; dielectric permittivity; dielectric stacking effect; leakage current density; metal-insulator-metal capacitor; one-layer dielectrics; quadratic voltage coefficient; thin layers; voltage linearity; Aluminum oxide; Capacitance; Capacitors; Hafnium compounds; Leakage current; MIM capacitors; Aluminum oxide; dielectric stacking; hafnium oxide; high-$kappa$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2228162
Filename :
6384661
Link To Document :
