DocumentCode
1760293
Title
1342 nm High-Power Picosecond Pulse Generation by a Passively Mode-Locked 
Laser
Author
Ying Yang ; Jia Hou ; Jing-Liang He ; Jin-Long Xu ; He Yang ; Fei Lou ; Zhao-Wei Wang ; Rui-Hua Wang ; Xun-Min Liu
Author_Institution
Key Lab. of Crystal Mater., Shandong Univ., Jinan, China
Volume
25
Issue
15
fYear
2013
fDate
Aug.1, 2013
Firstpage
1506
Lastpage
1509
Abstract
A high-power diode-pumped passively mode-locked Nd:YVO4 laser at 1342 nm with a semiconductor saturable absorber mirror is demonstrated in this letter. With the optimum cavity design, the maximum average output power of 2.19 W is obtained with an incident pump power of 12.35 W, corresponding to a slope efficiency of 19% and an optical conversion efficiency of 17.7%. The minimum pulse duration is measured to be 8.6 ps with the repetition rate of 63.4 MHz. The single pulse energy and peak power are calculated to be 34.5 nJ and 4 kW, respectively.
Keywords
laser beams; laser cavity resonators; laser mirrors; laser mode locking; neodymium; optical pulse generation; optical pumping; optical saturable absorption; semiconductor lasers; solid lasers; yttrium compounds; YVO4:Nd; energy 34.5 nJ; frequency 63.4 MHz; high-power diode-pumped passively mode-locked laser; high-power picosecond pulse generation; incident pump power; laser peak power; maximum average output power; minimum pulse duration; optical conversion efficiency; optimum cavity design; power 12.35 W; power 2.19 W; power 4 kW; repetition rate; semiconductor saturable absorber mirror; single pulse energy; slope efficiency; time 8.6 ps; wavelength 1342 nm; ${rm Nd}{:}{rm YVO}_{4}$
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2013.2267211
Filename
6527891
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