Title :
An Analytic Model for Heterojunction Tunnel FETs With Exponential Barrier
Author :
Taur, Yuan ; Jianzhi Wu ; Jie Min
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California at San Diego, La Jolla, CA, USA
Abstract :
This paper presents an analytic model for double-gate tunnel FETs with an exponential barrier. By carrying out the Wentzel-Kramer-Brillouin integral in closed form, an I-V model is formulated in terms of a single integral of a continuous function with respect to energy. The model shows that source degeneracy helps the linear region Ids-Vds characteristics, but degrades the saturation current. Also investigated is the role of the effective density of states on the debiasing of Vgs due to channel inversion charge at low Vds. A high effective density of states is shown to lead to superlinear Ids-Vds characteristics.
Keywords :
WKB calculations; field effect transistors; tunnel transistors; I-V model; Wentzel-Kramer-Brillouin integral; channel inversion charge; double-gate tunnel FET; exponential barrier; field effect transistor; heterojunction tunnel FET; saturation current; source degeneracy; Analytical models; Heterojunctions; Indium gallium arsenide; MOSFET; Mathematical model; Tunneling; Band-to-band tunneling; heterojunction; tunnel FET (TFET); tunnel FET (TFET).;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2407695
