MOCVD Grown HgCdTe Barrier Structures for HOT Conditions (July 2014)

Author

Kopytko, M. ; Keblowski, Artur ; Gawron, W. ; Kowalewski, Adam ; Rogalski, A.

Author_Institution

Inst. of Appl. Phys., Mil. Univ. of Technol., Warsaw, Poland

Volume

61

Issue

11

fYear

2014

fDate

Nov. 2014

Firstpage

3803

Lastpage

3807

Abstract

In this paper, we report on first midwavelength infrared HgCdTe barrier detectors with a zero valence band offset grown by metal organic chemical vapor deposition on GaAs substrates. Investigated structures have the same capbarrier structural unit, p⁺-B_p, and N⁺ bottom contact layer, but a different nand p-type absorption layers. Initial experiments indicate the influence of the barrier on electrical and optical performances of the devices. Both type of photodetectors exhibit dark current densities in the range (2÷3×10^-4 A/cm² at 230 K and maximum responsivities of ~2 A/W.

Keywords

II-VI semiconductors; MOCVD; absorption; cadmium compounds; current density; gallium arsenide; infrared detectors; mercury compounds; p-n heterojunctions; photodetectors; semiconductor growth; HOT conditions; HgCdTe-GaAs; MOCVD; bottom contact layer; cap-barrier structural unit; dark current density; electrical performance; metal organic chemical vapor deposition; midwavelength infrared MCT barrier detector; n-type absorption layer; optical performance; p-type absorption layer; photodetector; temperature 230 K; zero valence band offset grown; Dark current; Detectors; Educational institutions; MOCVD; Materials; Photodetectors; Temperature measurement; HgCdTe; barrier detectors; infrared (IR) detectors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2359224

Filename

6917014