Fabrication of (200)-Oriented TiN Films on Si (100) Substrates by DC Magnetron Sputtering

Author

Rui Sun ; Makise, Kazumasa ; Wei Qiu ; Terai, Hirotaka ; Zhen Wang

Author_Institution

Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China

Volume

25

Issue

3

fYear

2015

fDate

42156

Firstpage

1

Lastpage

4

Abstract

TiN films with (200) orientation were fabricated on single-crystal Si (100) substrates by dc magnetron sputtering method. We used HF solution to clean the Si substrates and achieved atomic smooth substrates with single-crystal surface. We deposited TiN films on the substrates with different sputtering conditions and observed that temperature can affect the quality of TiN films dramatically. Both X-ray diffraction and R-T measurement results show that the films deposited at a high temperature have a sharp (200) orientation and very high superconducting transition temperature of 5.4 K.

Keywords

X-ray diffraction; sputter deposition; superconducting materials; superconducting thin films; superconducting transition temperature; titanium compounds; (200)-oriented TiN films; DC magnetron sputtering method; R-T measurement; Si; TiN; X-ray diffraction; atomic smooth substrates; high superconducting transition temperature; single-crystal Si (100) substrates; single-crystal surface; Films; Silicon; Substrates; Superconducting transition temperature; Surface treatment; Temperature measurement; Tin; Magnetron sputtering; magnetron sputtering; silicon; superconducting films; titanium nitride; transition temperature;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/TASC.2014.2383694

Filename

6990527