DocumentCode :
1762299
Title :
Sinusoidal Current Operation of Delay-Time Compensation for Parallel-Connected IGBTs
Author :
Alvarez, R. ; Bernet, Steffen
Author_Institution :
Power Electron. Lab., Dresden Univ. of Technol., Dresden, Germany
Volume :
50
Issue :
5
fYear :
2014
fDate :
Sept.-Oct. 2014
Firstpage :
3485
Lastpage :
3493
Abstract :
The parallel connection of IGBTs is being applied in various low- and medium-voltage converters. The selection of the devices, the manual parametrization of gate units, and the substantial device derating are substantial disadvantages of state-of-the-art converters with parallel-connected insulated-gate bipolar transistors (IGBTs). A new, low-expensive, and automated delay-time compensation method without additional current measurements was introduced in the 2011 IEEE Energy Conversion Congress and Exposition. This paper briefly reviews the structure and function of this new scheme, shows the extension of the scheme for three parallel-connected IGBTs, and investigates the performance of the new delay-time compensation principle for sinusoidal current operation at different cos φ and ma values, as in a converter for drives.
Keywords :
compensation; convertors; delays; insulated gate bipolar transistors; 2011 IEEE Energy Conversion Congress and Exposition; automated delay-time compensation method; insulated-gate bipolar transistors; low-voltage converters; medium-voltage converters; parallel-connected IGBT; sinusoidal current operation; Current measurement; Delays; Insulated gate bipolar transistors; Integrated circuits; Logic gates; Voltage measurement; High-power converters; insulated-gate bipolar transistor (IGBT); parallel connection;
fLanguage :
English
Journal_Title :
Industry Applications, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-9994
Type :
jour
DOI :
10.1109/TIA.2014.2305905
Filename :
6737235
Link To Document :
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