• DocumentCode
    1763352
  • Title

    A 5-Bit 1.25-GS/s 4x-Capacitive-Folding Flash ADC in 65-nm CMOS

  • Author

    Chi-Hang Chan ; Yan Zhu ; Sai-Weng Sin ; Seng-Pan U ; Martins, Rui P. ; Maloberti, Franco

  • Author_Institution
    State-Key Lab. of Analog & Mixed Signal VLSI, Univ. of Macau, Macao, China
  • Volume
    48
  • Issue
    9
  • fYear
    2013
  • fDate
    Sept. 2013
  • Firstpage
    2154
  • Lastpage
    2169
  • Abstract
    This paper presents a 5-bit 1.25-GS/s folding flash ADC. The prototype achieves a folding factor of four with a capacitive folding technique that only consumes dynamic power. Incorporated with various calibration schemes, folding errors and the comparator´s threshold inaccuracies are corrected, thus allowing a low input capacitance of 80 fF. The design is fabricated using 65-nm digital CMOS technology and occupies 0.007 mm 2. The maximum DNL and INL post calibration are 0.67 and 0.47 LSB, respectively. Measurement results show that the ADC can achieve 1.25 GS/s at 1-V supply with a total power consumption of 595 μW. In addition, it exhibits a mean ENOB of 4.8b at dc among ten chips, which yields an FoM of 17 fJ/conversion-step.
  • Keywords
    CMOS digital integrated circuits; analogue-digital conversion; calibration; comparators (circuits); power consumption; CMOS; DNL calibration; ENOB; FoM; INL post calibration; calibration schemes; capacitance; capacitive-folding flash ADC; comparator threshold; digital CMOS technology; dynamic power; folding errors; power 595 muW; power consumption; size 65 nm; storage capacity 5 bit; Ash; Bandwidth; Calibration; Capacitance; Capacitors; Educational institutions; Power demand; Analog-to-digital conversion (ADC); Flash ADC; calibration; embedded reference; folding; low power;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2013.2264617
  • Filename
    6529171