DocumentCode
1763352
Title
A 5-Bit 1.25-GS/s 4x-Capacitive-Folding Flash ADC in 65-nm CMOS
Author
Chi-Hang Chan ; Yan Zhu ; Sai-Weng Sin ; Seng-Pan U ; Martins, Rui P. ; Maloberti, Franco
Author_Institution
State-Key Lab. of Analog & Mixed Signal VLSI, Univ. of Macau, Macao, China
Volume
48
Issue
9
fYear
2013
fDate
Sept. 2013
Firstpage
2154
Lastpage
2169
Abstract
This paper presents a 5-bit 1.25-GS/s folding flash ADC. The prototype achieves a folding factor of four with a capacitive folding technique that only consumes dynamic power. Incorporated with various calibration schemes, folding errors and the comparator´s threshold inaccuracies are corrected, thus allowing a low input capacitance of 80 fF. The design is fabricated using 65-nm digital CMOS technology and occupies 0.007 mm 2. The maximum DNL and INL post calibration are 0.67 and 0.47 LSB, respectively. Measurement results show that the ADC can achieve 1.25 GS/s at 1-V supply with a total power consumption of 595 μW. In addition, it exhibits a mean ENOB of 4.8b at dc among ten chips, which yields an FoM of 17 fJ/conversion-step.
Keywords
CMOS digital integrated circuits; analogue-digital conversion; calibration; comparators (circuits); power consumption; CMOS; DNL calibration; ENOB; FoM; INL post calibration; calibration schemes; capacitance; capacitive-folding flash ADC; comparator threshold; digital CMOS technology; dynamic power; folding errors; power 595 muW; power consumption; size 65 nm; storage capacity 5 bit; Ash; Bandwidth; Calibration; Capacitance; Capacitors; Educational institutions; Power demand; Analog-to-digital conversion (ADC); Flash ADC; calibration; embedded reference; folding; low power;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.2013.2264617
Filename
6529171
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