On the Performance of Lateral SiGe Heterojunction Bipolar Transistors With Partially Depleted Base

Author

Raman, Srikumar ; Sharma, Prachi ; Neogi, Tuhin Guha ; LeRoy, Mitchell R. ; Clarke, Ryan ; McDonald, John F.

Author_Institution

Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA

Volume

62

Issue

8

fYear

2015

fDate

Aug. 2015

Firstpage

2377

Lastpage

2383

Abstract

This paper discusses improvements to a lateral bipolar device capable of integration into the existing CMOS process flow. With the help of simulations, we demonstrate that the emitter transit time limits the cutoff frequency of a lateral bipolar device. We show that with the introduction of a heterojunction and a partially depleted base, we can decrease the emitter transit time and increase the current gain and the cutoff frequency (f_t) of the device. For a balanced design, our simulations indicate an n-p-n device with an f_t of 812 GHz and an f_max of 1.08 THz; and a p-n-p device with an f_t of 635 GHz and an f_max of 1.15 THz. The collector current at cutoff frequency for both n-p-n and p-n-p devices is ~0.03 mA-roughly 100 times lower than commercial vertical heterojunction bipolar transistors.

Keywords

CMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; CMOS process flow; SiGe; cutoff frequency; emitter transit time limits; frequency 1.08 THz; frequency 1.15 THz; frequency 635 GHz; frequency 812 GHz; lateral bipolar device; lateral heterojunction bipolar transistors; n-p-n device; p-n-p device; Cutoff frequency; Doping; Mathematical model; Semiconductor process modeling; Silicon germanium; Thermal resistance; Bipolar transistors; Silicon on Insulator (SOI) devices; Silicon on Insulator (SOI) devices.; heterojunction bipolar transistors (HBTs);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2438819

Filename

7123593