A 25-Gb/s Monolithic Optical Transmitter With Micro-Ring Modulator in 130-nm SoI CMOS

Author

Jun Li ; Guoliang Li ; Xuezhe Zheng ; Raj, Kannan ; Krishnamoorthy, Ashok V. ; Buckwalter, James F.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, La Jolla, CA, USA

Volume

25

Issue

19

fYear

2013

fDate

Oct.1, 2013

Firstpage

1901

Lastpage

1903

Abstract

An Si photonic transmitter is integrated in a 130-nm silicon-on-insulator complementary metal-oxide-semiconductor technology. A high-speed photonic ring modulator is designed for 25-Gb/s operation with an 8-dB extinction ratio. The ring is driven with a 2.4-Vpp swing using a low-power inverter driver. With a reference receiver, the 25-Gb/s link is measured with a bit error rate (BER) of 10^-12. The total transmitter power consumption is 17 mW at 25 Gb/s for an energy efficiency of 680 fJ/b excluding laser and ring tuning power.

Keywords

CMOS integrated circuits; invertors; micro-optics; optical modulation; optical transmitters; BER; CMOS; SOI; bit error rate; bit rate 25 Gbit/s; complementary metal-oxide-semiconductor; low-power inverter driver; micro-ring modulator; monolithic optical transmitter; photonic transmitter; power 17 mW; silicon-on-insulator; size 130 nm; Bandwidth; CMOS integrated circuits; Capacitance; Modulation; Optical transmitters; Photonics; Silicon; CMOS; Optical communications; optical interconnections; optical transmitter; ring modulator; silicon photonics;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2013.2279509

Filename

6587273