Title :
Silicon Integrated InGaAs/InAlAs/AlAs HBV Frequency Tripler
Author :
Malko, Aleksandra ; Bryllert, Tomas ; Vukusic, Josip ; Stake, Jan
Author_Institution :
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
We present an integrated heterostructure barrier varactor frequency tripler on silicon substrate. The InGaAs/InAlAs/AlAs material structure is transferred onto the silicon wafer using low-temperature plasma-assisted bonding. The presented multiplier operates in the W-band (90-110 GHz). The module delivers 22.6 dBm, with a conversion loss of 6 dB, and 9% 3-dB bandwidth.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; multiplying circuits; silicon; varactors; wafer bonding; InGaAs-InAlAs-AlAs; W-band; conversion loss; frequency 90 GHz to 110 GHz; frequency multiplier; integrated heterostructure barrier varactor frequency tripler; loss 6 dB; low-temperature plasma-assisted bonding; material structure; silicon integrated HBV frequency tripler; silicon substrate; silicon wafer; wafer bonding; Frequency multipliers; III–V semiconductors; heterogeneous integration; heterostructure barrier varactors; integrated circuits; millimeter-wave diodes; silicon; wafer bonding;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2262131
