DocumentCode :
1764971
Title :
Vertical CdZnO/ZnO Quantum-Well Light-Emitting Diode
Author :
Horng-Shyang Chen ; Shao-Ying Ting ; Che-Hao Liao ; Chih-Yen Chen ; Chieh Hsieh ; Yu-Feng Yao ; Hao-Tsung Chen ; Yean-Woei Kiang ; Chih-Chung Yang
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume :
25
Issue :
3
fYear :
2013
fDate :
Feb.1, 2013
Firstpage :
317
Lastpage :
319
Abstract :
A vertical light-emitting diode (VLED) with the CdZnO/n-ZnO quantum wells and n+-ZnO capping layer grown with molecular beam epitaxy and the p-GaN layer grown with metalorganic chemical vapor deposition, is fabricated and characterized. Its performances are compared with those of a lateral LED based on the same epitaxial structure to show the significantly lower device resistance, smaller leakage current, weaker output intensity saturation, relatively lower defect emission, and stronger emissions from the p-GaN and n-ZnO layers in the VLED.
Keywords :
II-VI semiconductors; MOCVD; cadmium compounds; leakage currents; light emitting diodes; molecular beam epitaxial growth; quantum well devices; wide band gap semiconductors; zinc compounds; CdZnO-ZnO; VLED; capping layer; defect emissions; device resistance; leakage current; metalorganic chemical vapor deposition; molecular beam epitaxy; output intensity saturation; vertical quantum-well light-emitting diode; Gallium nitride; Light emitting diodes; Molecular beam epitaxial growth; Resistance; Substrates; Zinc oxide; CdZnO/ZnO quantum well; vertical light-emitting diode;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2012.2236085
Filename :
6392205
Link To Document :
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