DocumentCode
1765504
Title
Error Model Guided Joint Performance and Endurance Optimization for Flash Memory
Author
Liang Shi ; Keni Qiu ; Mengying Zhao ; Xue, Chun Jason
Author_Institution
Coll. of Comput. Sci., Chongqing Univ., Chongqing, China
Volume
33
Issue
3
fYear
2014
fDate
41699
Firstpage
343
Lastpage
355
Abstract
As flash memory has better performance than hard disks, it has been widely applied in embedded systems, personal computers, and data centers as storage components. However, endurance and write performance are the two key challenges in the deployment of flash memory. In this paper, with the awareness of errors induced from write operations, endurance, and retention time, a stage-based optimization approach is proposed to improve the write performance and endurance at different usage stages of flash memory. A series of trace-driven simulations show that the proposed approach outperforms a set of state-of-the-art approaches in terms of write performance and lifetime.
Keywords
circuit optimisation; error analysis; flash memories; endurance optimization; error model guided joint performance; flash memory; retention time; stage-based optimization approach; write operations; Ash; Flash memories; Interference; Joints; Measurement; Optimization; Programming; Endurance error; error model; retention error; smart refresh; stage optimization; write error;
fLanguage
English
Journal_Title
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0278-0070
Type
jour
DOI
10.1109/TCAD.2013.2288691
Filename
6740049
Link To Document