Title :
Total Dose Radiation Damage: A Simulation Framework
Author :
Patrick, Erin ; Rowsey, Nicole ; Law, Mark E.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of Florida, Gainesville, FL, USA
Abstract :
TCAD has been a useful tool for device design for decades. Radiation damage of devices requires accurate simulation of how charges move and are trapped, and the trap populations. This paper describes a simulation capability for these classes of problems and provides examples demonstrating its usefulness for investigation of device failure.
Keywords :
radiation effects; semiconductor device reliability; technology CAD (electronics); TCAD; device design; device failure; radiation damage; simulation capability; trap populations; Electron traps; Floors; Hydrogen; Mathematical model; Object oriented modeling; Semiconductor process modeling; III-V semiconductor materials; heterostructures; oxide degradation; power devices; semiconductor device modeling; semiconductor device reliability; semiconductor devices;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2015.2425226
