Title :
A SiGe BiCMOS dielectric sensor utilizing an open-ended microstrip line in a 28 GHz colpitts oscillator
Author :
Jamal, Farabi Ibne ; Guha, Subhajit ; Meliani, Chafik
Author_Institution :
IHP, Frankfurt (Oder), Germany
Abstract :
In this paper, a microwave dielectric sensor is presented using an open-ended microstrip line. It is fabricated in a standard 0.25 μm SiGe BiCMOS process (fT/fmax = 180/220 GHz). A theoretical basis of open-ended microstrip line as dielectric sensor has been proposed and it is used as a permittivity dependent capacitor in the Colpitts oscillator. The sensor distinguishes permittivities ranging from 1 to 20 in the frequency range 26 to 29 GHz. With no material on top of the sensor, oscillation frequency settles at 28.72 GHz. Air, honey, epoxy resin (gray and orange) were used to verify and calibrate the sensor experimentally. In a further step, the sensor has been used to characterize water fraction in supersaturated sugar solution (honey). A sensitivity of 250 MHz/Unit permittivity has been shown. It spans an area of 0.6 mm2 and consumes 4.5 mA from a 3.3 V supply.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC oscillators; field effect MMIC; microstrip lines; microwave detectors; semiconductor materials; BiCMOS dielectric sensor; Colpitts oscillator; SiGe; air; current 4.5 mA; epoxy resin; frequency 26 GHz to 29 GHz; honey; microwave dielectric sensor; open-ended microstrip line; permittivity dependent capacitor; size 0.25 mum; supersaturated sugar solution; voltage 3.3 V; water fraction; Capacitance; Dielectrics; Materials; Microstrip; Oscillators; Permittivity; Permittivity measurement; dielectric measurement; oscillator; permittivity; transmission line measurements;
Conference_Titel :
Microwave Conference (EuMC), 2014 44th European
Conference_Location :
Rome
DOI :
10.1109/EuMC.2014.6986614