DocumentCode
1766976
Title
A 57–66 GHz power amplifier with a linearization technique in 65-nm CMOS process
Author
Jin-Fu Yeh ; Jen-Hao Cheng ; Jeng-Han Tsai ; Tian-Wei Huang
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear
2014
fDate
6-9 Oct. 2014
Firstpage
1253
Lastpage
1256
Abstract
This paper presents a linearization technique with a body diode for 60-GHz power amplifier (PA). This linearization technique aims to achieve adequate linear output power as PA operating under lower power consumption. This proposed technique can benefit the reduction of total power consumption of a 60-GHz phased array. The PA is implemented in TSMC 65-nm CMOS process. At 1-V supply voltage, the measured maximum output powers are all larger than 10 dBm over 57-66 GHz. Third-order inter-modulation distortion (IMD3) can be mitigated over 30 dB by the proposed linearization technique. Moreover, the improvement of IMD3 is larger than 25 dB among the entire operation bandwidth.
Keywords
CMOS integrated circuits; intermodulation distortion; linearisation techniques; millimetre wave power amplifiers; power consumption; CMOS process; IMD3 improvement; PA; TSMC; body diode; frequency 57 GHz to 66 GHz; linear output power; linearization technique; maximum output power measurement; operation bandwidth; phased array; power amplifier; power consumption reduction; size 65 nm; supply voltage; third-order intermodulation distortion; voltage 1 V; Arrays; Bandwidth; Linearity; Linearization techniques; Nonlinear distortion; Power demand; Power generation; 60-GHz; diode; linearizer; power amplifier(PA);
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference (EuMC), 2014 44th European
Conference_Location
Rome
Type
conf
DOI
10.1109/EuMC.2014.6986670
Filename
6986670
Link To Document