Title :
Analysis and characterization of power MOSFETs for power converters energy&reliability-aware-design
Author :
Di Capua, Giulia ; Femia, Nicola ; Toledo, D. ; Abbatelli, L. ; Bazzano, Gaetano
Author_Institution :
DIEM, Univ. of Salerno, Fisciano, Italy
Abstract :
This paper discusses the impact of Power MOSFETs (PMs) Capacitance-Voltage (C-V) characteristics on switching losses in power converters. A fast and robustly convergent numerical technique is adopted to analyze the sensitivity of PMs power losses with respect to their C-V shapes. Such technique helps both in identifying desirable specifications for PMs design, and in achieving appropriate selection of PMs for power converters energy&reliability aware design. The results presented in this paper, concerning loss analysis and experimental verification for a 85V to 170V@0.5A dc-dc boost converter, highlight the PMs C-V curves impact and the valuable support of the proposed technique in PMs design.
Keywords :
DC-DC power convertors; power MOSFET; semiconductor device reliability; sensitivity analysis; DC-DC boost converter; PM power losses; current 0.5 A; loss analysis; power MOSFET; power converters; reliability aware design; voltage 85 V to 170 V; Capacitance; Capacitance-voltage characteristics; Capacitors; Logic gates; MOSFET; Silicon; Switching loss; MOSFETs Commutation Analysis; MOSFETs Parasitic Capacitances; Power MOSFETs technology;
Conference_Titel :
Industrial Electronics (ISIE), 2014 IEEE 23rd International Symposium on
Conference_Location :
Istanbul
DOI :
10.1109/ISIE.2014.6864648
