Title :
Semiconductor Lasers on Silicon
Author_Institution :
Univ. of California, Santa Barbara, Santa Barbara, CA, USA
Abstract :
Recent work has focused on the epitaxial growth of III-V layers on silicon using intermediate buffer layers, typically Ge and strained superlattices, to minimize dislocations propagating into the active region. The use of quantum dot (QD) laser gain material can minimize the effect of threading dislocations on threshold and power, even after aging. These lasers can have low threshold, high cw power (180 mW CW), high cw temperature (120 °C) and high T0 (>200K up to 50°C).
Keywords :
elemental semiconductors; quantum dot lasers; silicon; III-V layers; Si; active region; aging; cw power; cw temperature; dislocation propagation; epitaxial growth; intermediate buffer layers; power 180 mW; quantum dot laser gain material; semiconductor lasers; strained superlattices; temperature 120 degC; threading dislocations; Laser radar; Power lasers; Quantum dot lasers; Silicon photonics; Transmitters;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2014 International
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4799-5721-7
DOI :
10.1109/ISLC.2014.147
