DocumentCode
1768016
Title
Design and Analysis of Gan-Based Bipolar Cascade VCSELs
Author
Piprek, Joachim
Author_Institution
NUSOD Inst. LLC, Newark, DE, USA
fYear
2014
fDate
7-10 Sept. 2014
Firstpage
167
Lastpage
168
Abstract
The insertion of a tunnel junction into the multiquantum-well active region allows for carrier recycling and high quantum efficiencies. This concept is applied to GaN-based vertical-cavity surface-emitting lasers (VCSELs) and results in strong performance improvements.
Keywords
III-V semiconductors; gallium compounds; laser cavity resonators; quantum cascade lasers; surface emitting lasers; wide band gap semiconductors; GaN; GaN-based bipolar cascade VCSEL; GaN-based vertical-cavity surface-emitting lasers; carrier recycling; multiquantum-well active region; quantum efficiency; tunnel junction insertion; Junctions; Power generation; Quantum cascade lasers; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2014 International
Conference_Location
Palma de Mallorca
Print_ISBN
978-1-4799-5721-7
Type
conf
DOI
10.1109/ISLC.2014.216
Filename
6987503
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