New materials for memristive switching

Author

Byung Joon Choi ; Ning Ge ; Yang, Jie J. ; Min-Xian Zhang ; Williams, R.S. ; Norris, Kate J. ; Kobayashi, Nobuhiko P.

Author_Institution

Hewlett-Packard Labs., Hewlett-Packard Co., Palo Alto, CA, USA

fYear

2014

fDate

1-5 June 2014

Firstpage

2808

Lastpage

2811

Abstract

Materials play a critical role in memristive devices and the research community is aggressively searching for the most applicable material systems for memristive switching. Two representative examples of newly developed switching materials are presented in this paper, including nitride memristors and Pt doped SiO₂ nanometallic memristors. The former represents nonoxide systems that might be more compatible with nitride electrodes preferred in a fab and the latter represents engineered materials that exhibit a better controllability over the formation of switching channel(s).

Keywords

electrodes; memristors; random-access storage; switching; Pt-SiO₂; memristive devices; memristive switching; nanometallic memristors; nitride electrodes; nitride memristors; nonoxide systems; switching channel; switching materials; Electrodes; Films; III-V semiconductor materials; Memristors; Metals; Switches; Pt doped SiO2; memory; memristive devices; new switching materials; nitride memristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), 2014 IEEE International Symposium on

Conference_Location

Melbourne VIC

Print_ISBN

978-1-4799-3431-7

Type

conf

DOI

10.1109/ISCAS.2014.6865757

Filename

6865757