Atomistic simulation of random alloy fluctuations in InGaN/GaN nanowires

Author

Sacconi, F. ; Auf der Maur, M. ; Di Carlo, A. ; Pecchia, Antonio

Author_Institution

Tiberlab Srl, Rome, Italy

fYear

2014

fDate

3-6 June 2014

Firstpage

1

Lastpage

4

Abstract

In this work we present a theoretical study of the effect of random alloy fluctuations in a InGaN inclusion embedded in a GaN nanowire (NW) LED on the electronic and optoelectronic properties. The calculations are based on an empirical tight-binding (ETB) model, while strain is calculated with a valence force field (VFF) method. Energy gaps distributions are obtained and an optical spectral broadening of the cumulative spectra is found, due to alloy fluctuations. A correlation between ground state transition energies and optical strengths has been found, with Virtual Crystal Approximation (VCA) clearly overestimating random mean results.

Keywords

III-V semiconductors; energy gap; fluctuations; gallium compounds; ground states; indium compounds; light emitting diodes; nanowires; spectral line broadening; tight-binding calculations; wide band gap semiconductors; InGaN-GaN; atomistic simulation; cumulative spectra; electronic properties; empirical tight-binding model; energy gap distributions; ground state transition energies; inclusion; nanowire LED; optical spectral broadening; optical strengths; optoelectronic properties; random alloy fluctuations; strain; valence force field; virtual crystal approximation; Atom optics; Fluctuations; Gallium nitride; Metals; Nanowires; Stationary state; Strain; atomistic; nanowires; nitrides; random alloy; tight-binding;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics (IWCE), 2014 International Workshop on

Conference_Location

Paris

Type

conf

DOI

10.1109/IWCE.2014.6865835

Filename

6865835