DocumentCode
1769713
Title
Modulation of bandgap and current in Graphene/BN heterostructures by tuning the transverse electric field
Author
Van-Truong Tran ; Saint-Martin, J. ; Dollfus, P.
Author_Institution
Inst. d´Electron. Fondamentale (IEF), Univ. Paris-sud, Orsay, France
fYear
2014
fDate
3-6 June 2014
Firstpage
1
Lastpage
2
Abstract
By means of atomistic Tight Binding simulations, we study heterostructures made of an armchair BN nanoribbon sided by two armchair graphene ribbons where a high band gap can be opened. We show that this band gap can be significantly suppressed by applying a relatively weak transverse electric field. This effect can be used to strongly enhance the on/off current ratio higher in graphene transistors.
Keywords
III-V semiconductors; boron compounds; energy gap; graphene; nanoribbons; semiconductor-insulator boundaries; tight-binding calculations; wide band gap semiconductors; BN-C; armchair BN nanoribbon; armchair graphene ribbons; atomistic tight binding simulations; bandgap modulation; graphene transistors; graphene-BN heterostructures; on-off current ratio; transverse electric fields; Boron; Electric fields; Electric potential; Graphene; Photonic band gap; Transistors; Tuning; bandgap; boron nitride; graphene; transistor;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics (IWCE), 2014 International Workshop on
Conference_Location
Paris
Type
conf
DOI
10.1109/IWCE.2014.6865869
Filename
6865869
Link To Document