Analysis of heating phenomenon in oxide thin-film transistor under pulse voltage stress

Author

Kise, Kahori ; Fujii, Mami ; Tomai, Shigekazu ; Ueoka, Yoshihiro ; Yamazaki, Haruka ; Urakawa, Satoshi ; Yano, Koki ; Wang, Dapeng ; Furuta, Mamoru ; Horita, Masahiro ; Ishikawa, Yasuaki ; Uraoka, Yukiharu

Author_Institution

Nara Inst. of Sci. & Technol., Ikoma, Japan

fYear

2014

fDate

19-20 June 2014

Firstpage

1

Lastpage

2

Abstract

Degradation by Joule heating of the thin-film transistors (TFTs) is one of the important issues for realizing next-generation displays. We have investigated the thermal distribution on the channel region of transparent amorphous oxide semiconductor TFT in pulse operation using an infrared imaging system. We also discussed the relationship between the self-heating temperature and the degradation.

Keywords

amorphous semiconductors; heating; thin film transistors; Joule heating; channel region; heating phenomenon analysis; infrared imaging system; next-generation display; oxide thin-film transistor; pulse operation; pulse voltage stress; self-heating temperature; thermal distribution; transparent amorphous oxide semiconductor TFT; Degradation; Heating; Plasma temperature; Stress; Thermal analysis; Thin film transistors; Voltage measurement; TAOS; pulse stress; thermal analysis; thermal distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for

Conference_Location

Kyoto

Print_ISBN

978-1-4799-3614-4

Type

conf

DOI

10.1109/IMFEDK.2014.6867089

Filename

6867089