• DocumentCode
    1772302
  • Title

    Growth of device-quality orientation-patterned gallium phosphide (OP-GaP) by improved hydride vapour phase epitaxy

  • Author

    Schunemann, Peter G. ; Mohnkern, Lee ; Vera, Alonzo ; Yang, Xiaoping S. ; Lin, Angie C. ; Harris, James S. ; Tassev, Vladimir ; Snure, Michael

  • Author_Institution
    BAE Syst., Inc., Nashua, NH, USA
  • fYear
    2014
  • fDate
    8-13 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Substantial increases in substrate temperature, super-saturation, and V/III ratio have dramatically improved vertical domain propagation during hydride vapour phase epitaxy of orientation-patterned gallium phosphide, leading to device-quality quasi-phasematched layer thicknesses exceeding 400 microns.
  • Keywords
    III-V semiconductors; gallium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; GaP; device-quality orientation-patterned gallium phosphide; domain propagation; hydride vapour phase epitaxy; quasiphasematched layer thickness; super-saturation; Gallium; Nonlinear optics; Optical device fabrication; Optical pumping; Optical sensors; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2014 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6989885
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1772302