DocumentCode
1776012
Title
Design of a Ku-band AlGaN/GaN low noise amplifier
Author
Fengqiang Guo ; Zhihong Yao
Author_Institution
13th Res. Inst., China Electron. Technol. Group Corp., Shijiazhuang, China
fYear
2014
fDate
26-29 July 2014
Firstpage
1406
Lastpage
1408
Abstract
AlGaN/GaN technology is attractive for its application to power amplifier. With the deepening of the research, noise performance of GaN device has also won acceptance. Compared with GaAs LNA, GaN LNA has a unique superiority on power handling. In this paper, a GaN Ku-band low noise amplifier is designed. A noise figure of 2.4dB at 16GHz and a gain of 18dB in the band of 14-18GHz are obtained at a drain voltage of 10V. The fabricated MMIC occupies only 2mm × 1.1mm.
Keywords
III-V semiconductors; MMIC power amplifiers; aluminium compounds; gallium compounds; low noise amplifiers; wide band gap semiconductors; AlGaN-GaN; AlGaN-GaN technology; GaN Ku-band low noise amplifier; GaN LNA; MMIC; frequency 14 GHz to 18 GHz; gain 18 dB; power amplifier; voltage 10 V; Aluminum gallium nitride; Gallium arsenide; Gallium nitride; HEMTs; Low-noise amplifiers; MMICs; Noise; AlGaN/GaN HEMT; LNA; noise figure;
fLanguage
English
Publisher
ieee
Conference_Titel
Antennas and Propagation (APCAP), 2014 3rd Asia-Pacific Conference on
Conference_Location
Harbin
Print_ISBN
978-1-4799-4355-5
Type
conf
DOI
10.1109/APCAP.2014.6992789
Filename
6992789
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