Title :
Room temperature negative differential resistance in a GaN-based Tunneling Hot Electron Transistor
Author :
Yang, Z.C. ; Nath, Digbijoy ; Rajan, Sreeraman
Author_Institution :
Dept. of Electr. & Comput. Eng., Ohio State Univ. Columbus, Columbus, OH, USA
Abstract :
In this work, we use ballistic quantum transport in a III-nitride to realize room temperature negative differential resistance (NDR) in a GaN-based Tunneling Hot Electron Transistor. The results showed reproducible double-sweep characteristics, with peak-to-valley ratio (PVCR) of 7.2 and peak current density (PCD) about 143 A/cm2. This is the first report of repeatable room temperature negative differential resistance in a III-nitride device.
Keywords :
III-V semiconductors; current density; hot electron transistors; tunnel transistors; tunnelling; III-nitride device; ballistic quantum transport; double-sweep characteristics; gallium nitride-based tunneling hot electron transistor; peak current density; peak-to-valley ratio; room temperature NDR; room temperature negative differential resistance; Nickel; Resistance; Temperature; Temperature measurement; Thermal stability; Transistors; Tunneling;
Conference_Titel :
Device Research Conference (DRC), 2014 72nd Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4799-5405-6
DOI :
10.1109/DRC.2014.6872343
