DocumentCode
1778422
Title
Voltage level increment by proposed sub-cell for existing topologies
Author
Sappati, Santosh Kumar ; Varshney, Amitabh ; Singh, V. ; Gupta, Rajesh
Author_Institution
Nat. Inst. of Technol., Raipur, India
fYear
2014
fDate
20-23 May 2014
Firstpage
548
Lastpage
553
Abstract
This paper proposes and analyses a method that will increase the number of voltage level of any existing topology, only thing is load should be connected across H-bridges. In order to verify the proposed cell, various existing topologies have been simulated and analyzed. The purpose of the circuit proposed is to reduce the use of IGBT switches and hence improving the Total Harmonic Distortion.
Keywords
harmonic distortion; insulated gate bipolar transistors; invertors; network topology; H-bridges; IGBT switch subcell; power load; total harmonic distortion; voltage level increment; Asia; Equations; Insulated gate bipolar transistors; Inverters; Smart grids; Switches; Topology; Cascaded Inverter; Existing Topologies; Multilevel Inverter;
fLanguage
English
Publisher
ieee
Conference_Titel
Innovative Smart Grid Technologies - Asia (ISGT Asia), 2014 IEEE
Conference_Location
Kuala Lumpur
Type
conf
DOI
10.1109/ISGT-Asia.2014.6873851
Filename
6873851
Link To Document