Title :
Germanium lasers for the near and mid IR
Author :
Michel, J. ; Yan Cai ; Zhaohong Han ; Lin Zhang ; Wei Yu ; Kimerling, Lionel C.
Author_Institution :
Microphotonics Center, MIT, Cambridge, MA, USA
Abstract :
Ge lasers, monolithically integrated on a Si CMOS platform, offer great potential for future on-chip photonic systems. In addition, the wide gain spectrum opens the possibility for inexpensive tunable lasers in the near- and mid-IR.
Keywords :
CMOS integrated circuits; elemental semiconductors; germanium; semiconductor lasers; silicon; Ge-Si; Si CMOS platform; germanium lasers; on-chip photonic systems; Decision support systems; Electronic mail; Germanium; Lasers; Strain;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
DOI :
10.1109/ISTDM.2014.6874659
