• DocumentCode
    1779367
  • Title

    InAsBi photodiode operating in the MWIR

  • Author

    Sandall, Ian C. ; Bastiman, Faebian ; White, Ben ; Richards, Robert ; David, John ; Chee Hing Tan

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
  • fYear
    2014
  • fDate
    12-16 Oct. 2014
  • Firstpage
    356
  • Lastpage
    357
  • Abstract
    We present results demonstrating an InAsBi photodiode with a photo response beyond 3.6 μm. We observe photocurrent from the diode up to temperatures of 225 K with a dark current density of 2.6 Acm-2.
  • Keywords
    III-V semiconductors; current density; indium compounds; infrared spectra; photoconductivity; photodiodes; photoemission; InAsBi; InAsBi photodiode; MWIR operation; dark current density; diode photocurrent; photo response; Bismuth; Current measurement; Dark current; Fabrication; Photodiodes; Temperature dependence; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2014 IEEE
  • Conference_Location
    San Diego, CA
  • Type

    conf

  • DOI
    10.1109/IPCon.2014.6995395
  • Filename
    6995395
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1779367