Comparative study of AlN/GaN HEMT and MOSHEMT structures by varying oxide thickness

Author

Swain, R. ; Jena, K. ; Gaini, A. ; Lenka, T.R.

Author_Institution

Dept. of Electron. & Commun. Eng., Nat. Inst. of Technol. Silchar, Silchar, India

fYear

2014

fDate

12-15 Oct. 2014

Firstpage

128

Lastpage

131

Abstract

In this paper four possible structures of AlN/GaN HEMT and MOSHEMT have been investigated through extensive simulation by varying both oxide and AlN barrier layer thickness under the Gate Foot region. DC and RF characteristics are obtained and studied. Almost zero gate to source current is obtained in case of MOSHEMT structures which makes this device promising for low power applications. However, the HEMT structure possesses high gate capacitance of 40fF/μm and transconductance of 1.1mS/μm.

Keywords

III-V semiconductors; MOSFET; aluminium compounds; capacitance; electric admittance; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; AlN barrier layer thickness; AlN-GaN; AlN-GaN HEMT structure; DC characteristics; MOSHEMT structure; RF characteristics; extensive simulation; gate capacitance; gate foot region; low power applications; oxide thickness; transconductance; Gallium nitride; HEMTs; III-V semiconductor materials; Logic gates; MODFETs; Silicon compounds; Transconductance; AlN/GaN; Gate Foot; HEMT; MOSHEMT; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference (NMDC), 2014 IEEE 9th

Conference_Location

Aci Castello

Type

conf

DOI

10.1109/NMDC.2014.6997439

Filename

6997439