High-frequency integrated gate drivers for half-bridge GaN power stage

Author

Yuanzhe Zhang ; Rodriguez, M. ; Maksimovic, Dragan

Author_Institution

Dept. of Electr., Univ. of Colorado, Boulder, CO, USA

fYear

2014

fDate

22-25 June 2014

Firstpage

1

Lastpage

9

Abstract

This paper describes three driver options for integrated half-bridge power stage using depletion-mode GaN-on-SiC 0.15μm RF process: an active pull-up driver, a bootstrapped driver, and a modified active pull-up driver. The approaches are evaluated and compared in 5 W, 20 V synchronous Buck converter prototypes operating at 100 MHz switching frequency over a wide range of operating points. Measured efficiency peaks above 91% for the designs using the bootstrap and the modified active pull-up integrated drivers.

Keywords

III-V semiconductors; driver circuits; gallium compounds; power convertors; silicon compounds; wide band gap semiconductors; GaN-SiC; active pull-up integrated drivers; bootstrapped driver; depletion-mode RF process; driver options; frequency 100 MHz; high-frequency integrated gate drivers; integrated half-bridge power stage; power 5 W; size 0.15 mum; switching frequency; synchronous buck converter prototypes; voltage 20 V; Gallium nitride; HEMTs; Logic gates; MODFETs; Switches; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Control and Modeling for Power Electronics (COMPEL), 2014 IEEE 15th Workshop on

Conference_Location

Santander

Type

conf

DOI

10.1109/COMPEL.2014.6877120

Filename

6877120