Title :
A 5GHz/60GHz receiver front-end IC in 90nm CMOS technology
Author :
Inagaki, R. ; Tanaka, T. ; Tsuru, Masato ; Taniguchi, E. ; Fukumoto, H. ; Kameda, Suguru ; Suematsu, Noriharu ; Taira, A. ; Takagi, Toshiyuki ; Tsubouchi, Kazuo
Author_Institution :
Mitsubishi Electr. Corp., Kamakura, Japan
Abstract :
This paper presents a multi-band receiver front-end IC in 90nm CMOS technology. The receiver front-end IC is switchable between a 5GHz front-end and a 60GHz front-end. The architecture of the receiver front-end IC is a direct conversion in 5GHz band and a superheterodyne in 60GHz band. For the miniaturization, the 5GHz and 60GHz front-ends share a variable gain amplifier for adjustment of power level and a quadrature mixer for frequency conversion. The multi-band (5GHz/60GHz) receiver front-end IC achieved conversion gain of 32dB with noise figure (NF) of 5dB at 5GHz band and conversion gain of 32dB with NF of 8dB at 60GHz band.
Keywords :
CMOS integrated circuits; field effect MIMIC; field effect MMIC; microwave amplifiers; microwave mixers; microwave receivers; millimetre wave amplifiers; millimetre wave mixers; millimetre wave receivers; CMOS technology; direct conversion; frequency 5 GHz; frequency 60 GHz; frequency conversion; gain 32 dB; multiband receiver front-end integrated circuit; noise figure 5 dB; power level adjustment; quadrature mixer; size 90 nm; superheterodyne; variable gain amplifier; Gain; Integrated circuits; Mixers; Noise measurement; Radio frequency; Receivers; CMOS; LNA; VGA; front-end; millimeter-wave; multi-band; receiver;
Conference_Titel :
European Microwave Integrated Circuit Conference (EuMIC), 2014 9th
Conference_Location :
Rome
DOI :
10.1109/EuMIC.2014.6997781
