Title :
A 233-GHz low noise amplifier with 22.5dB gain in 0.13μm SiGe
Author :
Malz, Stefan ; Heinemann, B. ; Pfeiffer, Ullrich R.
Author_Institution :
IHCT, Univ. of Wuppertal, Wuppertal, Germany
Abstract :
A low noise amplifier (LNA) design for 230GHz applications in an advanced SiGe heterojunction bipolar transistor technology is presented. The circuit consists of a four-stage pseudo-differential cascode topology. It was implemented in a commercially available SiGe BiCMOS technology with fT/fmax of 300/450GHz. By employing positive feedback for unilateralization the small-signal gain is increased, enabling circuit operation in high frequency bands and improved efficiency. The amplifier has measured 22.5dB gain at 233GHz with a 3dB bandwidth of 10GHz and a simulated noise figure of 12.5dB. The low noise amplifier draws only 17mA from a 4V supply.
Keywords :
BiCMOS integrated circuits; differential amplifiers; feedback amplifiers; heterojunction bipolar transistors; low noise amplifiers; millimetre wave amplifiers; silicon compounds; submillimetre wave amplifiers; BiCMOS technology; LNA design; SiGe; advanced heterojunction bipolar transistor technology; bandwidth 10 GHz; circuit operation; current 17 mA; efficiency improvement; four-stage pseudodifferential cascode topology; frequency 230 GHz; frequency 233 GHz; frequency 300 GHz; frequency 450 GHz; gain 22.5 dB; high frequency bands; low noise amplifier design; noise figure; noise figure 12.5 dB; positive feedback; size 0.13 mum; small-signal gain; voltage 4 V; Gain; Impedance matching; Noise; Noise measurement; Power transmission lines; Silicon germanium; Transistors; Low noise amplifier (LNA); SiGe HBT; millimeter wave integrated circuits; positive feedback; receiver components; sub-millimeter wave integrated circuits; unilateralization;
Conference_Titel :
European Microwave Integrated Circuit Conference (EuMIC), 2014 9th
Conference_Location :
Rome
DOI :
10.1109/EuMIC.2014.6997824
