Broadband 1.7–2.8 GHz high-efficiency (58%), high-power (43 dBm) Class-BJ GaN power amplifier including package engineering

Author

Ture, E. ; Carrubba, V. ; Maroldt, S. ; Muser, M. ; Walcher, H. ; Quay, Ruediger ; Ambacher, Oliver

Author_Institution

Fraunhofer Inst. for Appl. Solid State Phys. (IAF), Freiburg, Germany

fYear

2014

fDate

6-7 Oct. 2014

Firstpage

345

Lastpage

348

Abstract

In this paper a broadband high-efficiency Class-BJ GaN HEMT-PA for wireless communication applications is realized. Influences of packaging and bond wires on the PA performance are investigated in order to demonstrate and use accurate package models. A novel optimization of bond wires for packaged powerbars is therefore performed and, subsequently a fully characterized PA is effectively designed. For the fully assembled PA module, measurement results demonstrated targeted broadband performance reaching approximately 50% operation bandwidth in the frequency range 1.7-2.8 GHz with 52-59% PAE, 58-66% drain efficiency and 43-44.5 dBm delivered output power while maintaining over 10 dB of G_T.

Keywords

III-V semiconductors; UHF power amplifiers; electronics packaging; gallium compounds; lead bonding; wide band gap semiconductors; wideband amplifiers; GaN; bond wires; broadband high-efficiency Class-BJ GaN HEMT-PA; efficiency 52 percent to 59 percent; efficiency 58 percent to 66 percent; frequency 1.7 GHz to 2.8 GHz; package engineering; packaged powerbars; packaging; wireless communication applications; Broadband amplifiers; Frequency measurement; Gallium nitride; Harmonic analysis; Power amplifiers; Wires; Broadband amplifiers; Class-J; GaN HEMT; packaged powerbars; power amplifiers (PAs);

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuit Conference (EuMIC), 2014 9th

Conference_Location

Rome

Type

conf

DOI

10.1109/EuMIC.2014.6997863

Filename

6997863