DocumentCode
1784352
Title
Design of GaN tri-gate HEMTs
Author
Alsharef, M. ; Granzner, Ralf ; Ture, E. ; Quay, Ruediger ; Racko, J. ; Breza, J. ; Schwierz, Frank
Author_Institution
Inst. fur Mikro- und Nanoelektronik, Tech. Univ. Ilmenau, Ilmenau, Germany
fYear
2014
fDate
20-22 Oct. 2014
Firstpage
1
Lastpage
4
Abstract
The operation of GaN tri-gate HEMTs is investigated by numerical device simulations. It is shown that the threshold voltage of such structures strongly depends on the width of the AlGaN/GaN body and to a lesser extent on the body height. The body height becomes more important as the gate length is reduced. However, the beneficial effect of the side gates saturates at body heights around 100 nm, independent of the gate length.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; numerical analysis; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; gate length; high electron mobility transistors; numerical device simulations; threshold voltage; trigate HEMT; Etching; Gallium nitride; HEMTs; Logic gates; MODFETs; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on
Conference_Location
Smolenice
Print_ISBN
978-1-4799-5474-2
Type
conf
DOI
10.1109/ASDAM.2014.6998657
Filename
6998657
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