Analysis and simulation of AlGaN/GaN Single Quantum Well Transistor Laser in ultra-violet band

Author

Hakkari, Behzad ; Mojaver, Hassan Rahbardar ; Kaatuzian, Hassan

Author_Institution

Electr. Eng. Dept., Amirkabir Univ. of Technol. (Tehran Polytech.), Tehran, Iran

fYear

2014

fDate

20-22 May 2014

Firstpage

454

Lastpage

457

Abstract

The performance and characteristics of an AlGaN/GaN Single Quantum Well Transistor Laser with 336 nm wavelength at room temperature has been analyzed in this paper for the first time. A charge control model which is based on coupled rate equations has been used for modeling. Using simulation, The Optical Frequency Response of this device has been exploited and the bandwidth of 25 GHz and Resonance Peak of 4 dB at 15 GHz has been achieved for this device. The base width in this work is 225 nm with 15 nm Quantum Well width.

Keywords

III-V semiconductors; aluminium compounds; frequency response; gallium compounds; quantum well lasers; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; AlGaN-GaN single quantum well transistor laser; charge control model; coupled rate equations; frequency 15 GHz; frequency 25 GHz; optical frequency response; resonance peak; size 15 nm; size 225 nm; ultraviolet band; wavelength 336 nm; Equations; Gallium nitride; Laser modes; Mathematical model; Quantum well lasers; Transistors; Bandwidth; GaN Transistor Laser; Optical Frequency Response; Single Quantum Well Transistor Laser;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering (ICEE), 2014 22nd Iranian Conference on

Conference_Location

Tehran

Type

conf

DOI

10.1109/IranianCEE.2014.6999583

Filename

6999583