Growth of low defect-density InP on exact Si (001) substrates by metalorganic chemical vapor deposition with position-controlled seed arrays

Growth of InP with high crystalline quality on exact Si (001) substrates is reported. InP seed arrays were deposited in 30 nm-wide SiO₂ trenches along the [1 -1 0] direction on Si substrates. Coalesced InP films were regrown on the seed layer arrays after removal of the SiO₂ mask. Cross-sectional transmission electron microscopy shows anisotropic distribution of defects along the [1 1 0] and [1 -1 0] directions. From x-ray diffraction measurement, full-width-at-half-maximum as small as 78 arcsec has been achieved from 2.3 μm InP in a coupled ω/2θ scan.