Growth of low defect-density InP on exact Si (001) substrates by metalorganic chemical vapor deposition with position-controlled seed arrays

Author

Qiang Li ; Chak Wah Tang ; Lau, Kei May ; Hill, Richard ; Vert, Alexey

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

fYear

2014

fDate

11-15 May 2014

Firstpage

1

Lastpage

2

Abstract

Growth of InP with high crystalline quality on exact Si (001) substrates is reported. InP seed arrays were deposited in 30 nm-wide SiO₂ trenches along the [1 -1 0] direction on Si substrates. Coalesced InP films were regrown on the seed layer arrays after removal of the SiO₂ mask. Cross-sectional transmission electron microscopy shows anisotropic distribution of defects along the [1 1 0] and [1 -1 0] directions. From x-ray diffraction measurement, full-width-at-half-maximum as small as 78 arcsec has been achieved from 2.3 μm InP in a coupled ω/2θ scan.

Keywords

III-V semiconductors; MOCVD; X-ray diffraction; indium compounds; semiconductor growth; semiconductor thin films; transmission electron microscopy; InP; Si; Si (001) substrates; X-ray diffraction; [1-10] direction; [110] direction; anisotropic defect distribution; coalesced films; coupled ω-2θ scan; cross-sectional transmission electron microscopy; crystalline quality; full-width-at-half-maximum; low defect-density InP; mask removal; metalorganic chemical vapor deposition; position-controlled seed arrays; seed layer arrays; size 30 nm; Epitaxial growth; Indium phosphide; Scanning electron microscopy; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 26th International Conference on

Conference_Location

Montpellier

Type

conf

DOI

10.1109/ICIPRM.2014.6880514

Filename

6880514