DocumentCode
1785741
Title
W-band InP-based resonant tunnelling diode oscillator with milliwatt output power
Author
Jue Wang ; Liquan Wang ; Chong Li ; Alharbi, Khalid ; Khalid, Amir ; Wasige, Edward
Author_Institution
High Freq. Electron. Group, Univ. of Glasgow, Glasgow, UK
fYear
2014
fDate
11-15 May 2014
Firstpage
1
Lastpage
2
Abstract
This paper presents a high power (milliwatt) W-band resonant tunneling diode (RTD) oscillator. The oscillator circuit employs two RTD devices in parallel and operates at 75.2 GHz with -0.2 dBm (0.95 mW) output power. To the authors knowledge, this is the highest reported output power for an RTD oscillator at W-band.
Keywords
millimetre wave diodes; millimetre wave oscillators; resonant tunnelling diodes; InP; RTD devices; RTD oscillator; frequency 75.2 GHz; high power W-band-based resonant tunnelling diode oscillator; milliwatt output power; power 0.95 mW; Current measurement; Educational institutions; MMICs; Oscillators; Power generation; Resonant frequency; Resonant tunneling devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials (IPRM), 26th International Conference on
Conference_Location
Montpellier
Type
conf
DOI
10.1109/ICIPRM.2014.6880531
Filename
6880531
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