Title :
TBCl etching for uniform-diameter InAsP nanowires
Author :
Tateno, K. ; Guoqiang Zhang ; Gotoh, H.
Author_Institution :
NTT Basic Res. Labs., NTT Corp., Atsugi, Japan
Abstract :
We investigated the effects of introducing tertiary-butyl chloride (TBCl) on InP and InAsP nanowire growth for the purpose of improving the tapering shape. The InP nanowire length was increased by supplying TBCl at low flow rates, and decreased gradually by supplying it at high flow rates. The growth in the radial direction was effectively suppressed by using TBCl. InAsP nanowires were also grown with TBCl. We obtained long and less tapered structures with good crystal quality. Selectivity of Cl etching to InAs and InP is discussed.
Keywords :
III-V semiconductors; etching; indium compounds; nanofabrication; nanowires; semiconductor growth; InAsP nanowire growth; InAsSb; InP; InP nanowire growth; InP nanowire length; chloride etching selectivity; crystal quality; flow rates; radial direction; tapering shape; tertiary-butyl chloride etching; uniform-diameter InAsP nanowires; Etching; Gold; Indium phosphide; MOCVD; Nanowires; Scanning electron microscopy;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 26th International Conference on
Conference_Location :
Montpellier
DOI :
10.1109/ICIPRM.2014.6880533
