DocumentCode
1785744
Title
TBCl etching for uniform-diameter InAsP nanowires
Author
Tateno, K. ; Guoqiang Zhang ; Gotoh, H.
Author_Institution
NTT Basic Res. Labs., NTT Corp., Atsugi, Japan
fYear
2014
fDate
11-15 May 2014
Firstpage
1
Lastpage
2
Abstract
We investigated the effects of introducing tertiary-butyl chloride (TBCl) on InP and InAsP nanowire growth for the purpose of improving the tapering shape. The InP nanowire length was increased by supplying TBCl at low flow rates, and decreased gradually by supplying it at high flow rates. The growth in the radial direction was effectively suppressed by using TBCl. InAsP nanowires were also grown with TBCl. We obtained long and less tapered structures with good crystal quality. Selectivity of Cl etching to InAs and InP is discussed.
Keywords
III-V semiconductors; etching; indium compounds; nanofabrication; nanowires; semiconductor growth; InAsP nanowire growth; InAsSb; InP; InP nanowire growth; InP nanowire length; chloride etching selectivity; crystal quality; flow rates; radial direction; tapering shape; tertiary-butyl chloride etching; uniform-diameter InAsP nanowires; Etching; Gold; Indium phosphide; MOCVD; Nanowires; Scanning electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials (IPRM), 26th International Conference on
Conference_Location
Montpellier
Type
conf
DOI
10.1109/ICIPRM.2014.6880533
Filename
6880533
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