Ferroelectric Pb(Zr, Ti)O3 thin layers on SrTiO3/GaAs

Author

Meunier, B. ; Louahadj, L. ; Le Bourdais, David ; Largeau, Ludovic ; Agnus, G. ; Mazet, L. ; Bachelet, R. ; Regreny, P. ; Albertini, D. ; Pillard, V. ; Dubourdieu, C. ; Gautier, B. ; Lecoeur, Philippe ; Saint-Girons, G.

Author_Institution

Ecole Centrale de Lyon, Univ. de Lyon, Ecully, France

fYear

2014

fDate

11-15 May 2014

Firstpage

1

Lastpage

2

Abstract

Ferroelectric epitaxial Pb(Zr, Ti)O₃(PZT) layers were grown by pulsed laser deposition on SrTiO₃/GaAs templates fabricated by molecular beam epitaxy. The templates present an excellent structural quality and the SrTiO₃/GaAs is abrupt at the atomic scale. The PZT layers contain a- and c- domains, as shown by X-Ray diffraction analyses. Piezoresponse force microscopy experiments and macroscopic electrical characterizations indicate that PZT is ferroelectric. A relative dielectric permittivity of 164 is extracted from these measurements.

Keywords

X-ray diffraction; epitaxial layers; ferroelectric thin films; gallium arsenide; lead compounds; molecular beam epitaxial growth; pulsed laser deposition; strontium compounds; PZT layers; Pb(ZrTi)O₃; X-ray diffraction; ferroelectric epitaxial layers; ferroelectric thin layer; molecular beam epitaxy; piezoresponse force microscopy; pulsed laser deposition; relative dielectric permittivity; structural quality; Electrodes; Gallium arsenide; Molecular beam epitaxial growth; Pulsed laser deposition; Semiconductor device measurement; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 26th International Conference on

Conference_Location

Montpellier

Type

conf

DOI

10.1109/ICIPRM.2014.6880535

Filename

6880535