Native oxides formation on MOVPE grown binary III-V materials — Impact on surface wettability

Author

Gocalinska, A. ; Bogdan, Justin ; Hughes, G. ; Pelucchi, E.

Author_Institution

Tyndall Nat. Inst., Univ. Coll. Cork, Cork, Ireland

fYear

2014

fDate

11-15 May 2014

Firstpage

1

Lastpage

2

Abstract

The native oxides formation on ambient-stored metalorganic vapour phase epitaxy (MOVPE) grown GaAs, InP and InAs is documented by contact angle measurements and X-ray photoelectron spectroscopy (XPS). The time dependent transitions from hydrophobic to hydrophilic states are presented alongside the change in relative amount of different types of oxides forming on the epitaxial surfaces. We present a qualitative agreement of wettability properties with the amount of group III oxides and lack of such correlation with the overall oxide composition, somehow indicating a (surprising) minor role of group V oxides.

Keywords

III-V semiconductors; MOCVD; X-ray photoelectron spectra; contact angle; gallium arsenide; hydrophilicity; hydrophobicity; indium compounds; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; wetting; GaAs; InAs; InP; MOVPE; X-ray photoelectron spectroscopy; XPS; ambient-stored metalorganic vapour phase epitaxy; binary III-V materials; contact angle measurements; epitaxial surfaces; group III oxides; group V oxides; hydrophilic states; hydrophobic states; native oxide formation; oxide composition; surface wettability; time dependent transitions; Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium phosphide; Surface morphology; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 26th International Conference on

Conference_Location

Montpellier

Type

conf

DOI

10.1109/ICIPRM.2014.6880537

Filename

6880537