Numerical study on hollow hexagonal InGaAs microdisk laser on silicon

We propose and numerically investigate a novel hollow hexagonal InGaAs microdisk laser on a silicon substrate, which can be fabricated by the micro-channel selective-area (MC-SA) MOVPE growth technique. By simply introducing an etched hole with a suitable radius at the center of the hexagonal microdisk, quasi-whispering-gallery modes emerge and the cavity Q factor improves drastically from 371 to 3574 with a disk size of less than 20 μm². Having full compatibility with the MC-SA MOVPE method, the presented scheme could be an attractive approach toward the monolithic integration of InGaAs disk lasers on silicon platforms.