• DocumentCode
    1785783
  • Title

    Asymmetric InGaAs MOSFETs with InGaAs source and InP drain

  • Author

    Jiongjiong Mo ; Lind, Erik ; Wernersson, Lars-Erik

  • Author_Institution
    Electr. & Inf. Technol., Lund Univ., Lund, Sweden
  • fYear
    2014
  • fDate
    11-15 May 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Asymmetric In0.53Ga0.47As MOSFETs with different regrown contacts at source (In0.53Ga0.47As) and drain (InP) have been developed. By introducing a wider bandgap material, InP as drain electrode, higher self-gain gm/gd has been obtained with reduced output conductance gd and improved break-down voltage Vbd. For Lg=100nm, a high oscillation frequency fmax=270GHz has been obtained using an InP drain.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; millimetre wave field effect transistors; semiconductor device breakdown; semiconductor growth; InGaAs; InP; asymmetric MOSFETs; drain electrode; frequency 270 GHz; improved breakdown voltage; reduced output conductance; regrown contacts; size 100 nm; wider bandgap material; Electrodes; Impact ionization; Indium gallium arsenide; Indium phosphide; Logic gates; MOSFET;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials (IPRM), 26th International Conference on
  • Conference_Location
    Montpellier
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2014.6880553
  • Filename
    6880553
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1785783