• DocumentCode
    1785795
  • Title

    Carrier dynamics in inhomogeneously broadened InAs/InP quantum-dot optical amplifiers

  • Author

    Karni, O. ; Kuchar, K.J. ; Capua, A. ; Mikhelashvili, V. ; Eisenstein, Gadi ; Sek, G. ; Misiewicz, J. ; Ivanov, V. ; Roithmaier, J.P.

  • Author_Institution
    Electr. Eng. Dept., Technion - Israel Inst. of Technol., Haifa, Israel
  • fYear
    2014
  • fDate
    11-15 May 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report on multi-wavelength pump-probe characterization of the fundamental gain dynamics in recently developed InAs/InP quantum-dot semiconductor optical amplifiers. Recovery of the gain at various wavelengths following a powerful optical pump pulse, was recorded at different bias levels and different excitation powers. Wavelength dependencies of gain saturation depth, of the level to which the gain recovers and of the recovery rates were obtained. Unlike in quantum-dash amplifiers, these quantum-dots exhibit no instantaneous gain response, confirming their zero-dimensional nature.
  • Keywords
    III-V semiconductors; indium compounds; optical pumping; optical saturation; quantum dot lasers; semiconductor optical amplifiers; semiconductor quantum dots; InAs-InP; carrier dynamics; gain saturation depth; inhomogeneously broadened indium arsenide-indium phosphide quantum-dot semiconductor optical amplifiers; multiwavelength pump-probe characterization; optical pump pulse; quantum-dash amplifiers; Absorption; Indium phosphide; Optical pumping; Quantum dots; Reservoirs; Semiconductor optical amplifiers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials (IPRM), 26th International Conference on
  • Conference_Location
    Montpellier
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2014.6880559
  • Filename
    6880559