Title :
Modeling parasitic capacitances in Gallium Nitride (GaN) FET transistor
Author_Institution :
Centro de Investig. y de Estudios Av. del I. P. N. Unidad Guadalajara (Cinvestav-GDL), Zapopan, Mexico
Abstract :
In this paper an effective method for modeling parasitic capacitances of Gallium Nitride (GaN) FET transistors is presented. The proposed method is a modification of a method that was proposed for Gallium Arsenide (GaAs) transistors. The modification consists of the computation of a constant relating to the asymmetry of the transistor when it is pinched-off. Experimental data, up to 50 GHz, show the effectiveness of the proposed method by comparing it with traditional methods.
Keywords :
III-V semiconductors; gallium compounds; microwave field effect transistors; semiconductor device models; wide band gap semiconductors; FET transistor; GaN; frequency 50 GHz; linear modelling; parasitic capacitances; parasitic elements; Capacitance; Field effect transistors; Gallium arsenide; Gallium nitride; Integrated circuit modeling; Silicon compounds; FET linear modeling; GaN FET transistor; parasitic elements;
Conference_Titel :
Central America and Panama Convention (CONCAPAN XXXIV), 2014 IEEE
Conference_Location :
Panama City
DOI :
10.1109/CONCAPAN.2014.7000417
