DocumentCode
1787589
Title
A non-volatile memory based physically unclonable function without helper data
Author
Wenjie Che ; Plusquellic, Jim ; Bhunia, Swarup
Author_Institution
ECE Dept., Univ. of New Mexico, Albuquerque, NM, USA
fYear
2014
fDate
2-6 Nov. 2014
Firstpage
148
Lastpage
153
Abstract
Stability across environmental variations such as temperature and voltage, is critically important for Physically Unclonable Functions (PUFs). Nearly all existing PUF systems to date need a mechanism to deal with “bit flips” when exact regeneration of the bitstring is required, e.g., for cryptographic applications. Error correction (ECC) and error avoidance schemes have been proposed but both of these require helper data to be stored for the regeneration process. Unfortunately, helper data adds time and area overhead to the PUF system and provides opportunities for adversaries to reverse engineer the secret bitstring. In this paper, we propose a non-volatile memory-based (NVM) PUF that is able to avoid bit flips without requiring any type of helper data. A voltage-to-digital converter technique is described for digitizing the analog entropy source and a robust median-finding algorithm is proposed as the reprograming strategy. Analysis on published experimental data is presented to demonstrate the practicability of our proposed strategy. We describe the technique in the context of emerging nano-devices, in particular, resistive random access memory (Memristor) cells, but the methodology is applicable to any type of NVM including Flash.
Keywords
analogue-digital conversion; circuit stability; cryptography; error correction; random-access storage; ECC; NVM; PUF systems; analog entropy source; area overhead; bit flips; bitstring exact regeneration; cryptography; environmental variations; error avoidance schemes; error correction schemes; memristor cells; nano-devices; nonvolatile memory based physically unclonable function; reprograming strategy; resistive random access memory; robust median-finding algorithm; stability; time overhead; voltage-to-digital converter technique; Entropy; Histograms; Memristors; Nonvolatile memory; Random access memory; Reliability; Resistance; Helper data; Memristor; Physically Unclonable Functions;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer-Aided Design (ICCAD), 2014 IEEE/ACM International Conference on
Conference_Location
San Jose, CA
Type
conf
DOI
10.1109/ICCAD.2014.7001345
Filename
7001345
Link To Document