The ion beam etching the materials for micro- and nanotechnologies

Author

Topyakova, Marina V. ; Velichko, A.A.

Author_Institution

Novosibirsk State Tech. Univ., Novosibirsk, Russia

fYear

2014

fDate

June 30 2014-July 4 2014

Firstpage

27

Lastpage

29

Abstract

The analysis of the ion-beam etching rates of the materials used for manufacturing the integrated circuits is carried out. The etching rate-time functions and etching rate - ion beam current functions are presented. The results show that the current increasing involves significant increase of sputtering and redeposition effects. Based on results the most suitable ion beam etching parameters for subsequent correction of experimental integrated circuits are determined.

Keywords

integrated circuit manufacture; nanoelectronics; sputter etching; etching rate-ion beam current functions; etching rate-time functions; integrated circuit manufacturing; ion-beam etching rates; microtechnology; nanotechnology; redeposition effects; sputtering effects; Etching; Integrated circuits; Ion beams; Materials; Nanoscale devices; Phosphors; Sputtering; focused ion beam etching; integrated circuits; scanning electron microscope;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices (EDM), 2014 15th International Conference of Young Specialists on

Conference_Location

Novosibirsk

ISSN

2325-4173

Print_ISBN

978-1-4799-4669-3

Type

conf

DOI

10.1109/EDM.2014.6882468

Filename

6882468